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HSE3012
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HSE3012

SKU: HSE3012
HSE3012 Transistor Silicon PNP CASE: TO218 MAKE: HSE
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer HSE
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 90
Derate (Amb) (W/°C) 720m
Min hFE 40
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 500k
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1269285
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