| Type | Transistor Silicon NPN | |
| Case | TO106 | |
| Manufacturer | HSE | |
| Vbr CBO | 40 | |
| Vbr CEO | 30 | |
| Max. PD (W) | 300m | |
| Derate (Amb) (W/°C) | 3.0m | |
| hfe | 30 | |
| Icbo Max. @Vcb Max. (A) | 100n | |
| Polarity | NPN | |
| Trans. Freq (Hz) Min. | 300M | |
| @VCE (test) (V) | 1.0 | |
| Oper. Temp (°C) Max. | 125 | |
| @Ic (A) | 100m | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.3 W | |
| Maximum Collector-Base Voltage |Vcb| | 40 V | |
| Maximum Collector-Emitter Voltage |Vce| | 30 V | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Transition Frequency (ft): | 300 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 80 | |
| SKU | 1280866 | |