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HSE316
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HSE316

SKU: HSE316
HSE316 Transistor Silicon PNP CASE: TO106 MAKE: HSE
Product specifications
Type Transistor Silicon PNP
Case TO106
Manufacturer HSE
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 300m
Derate (Amb) (W/°C) 3.0m
hfe 100
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 1248617
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