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HSE317
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HSE317

SKU: HSE317
HSE317 Transistor Silicon NPN CASE: TO106 MAKE: HSE
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer HSE
Vbr CBO 70
Vbr CEO 50
Max. PD (W) 300m
Derate (Amb) (W/°C) 3.0m
hfe 250
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.31 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.01 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 250
SKU 1250908
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