HSE319

HSE319

SKU: HSE319
HSE319 Transistor Silicon PNP CASE: TO106 MAKE: HSE
Product specifications
Type Transistor Silicon PNP
Case TO106
Manufacturer HSE
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 200m
Derate (Amb) (W/°C) 3.0m
hfe 40
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 400M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1279497
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