HSE350

SKU: HSE350

HSE350 Transistor Silicon PNP CASE: TO106 MAKE: HSE

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO106
Manufacturer	HSE
Vbr CBO	25
Vbr CEO	25
Max. PD (W)	500m
Derate (Amb) (W/°C)	5.0m
hfe	30
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	200M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	125
@Ic (A)	150m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	1279241

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