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HSE829
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HSE829

SKU: HSE829
HSE829 Transistor Silicon PNP CASE: TO3 MAKE: HSE
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer HSE
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 115
Derate (Amb) (W/°C) 920m
Min hFE 20
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Trans. Freq (Hz) Min. 800k
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 115 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 1269265
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