HSE830

SKU: HSE830

HSE830 Transistor Silicon PNP CASE: TO3 MAKE: HSE

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	HSE
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	115
Derate (Amb) (W/°C)	920m
Min hFE	50
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	PNP
Trans. Freq (Hz) Min.	1.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	118 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Max. Operating Junction Temperature (Tj)	140 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	1269297

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