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HSE838
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HSE838

SKU: HSE838
HSE838 Transistor Silicon NPN CASE: TO3 MAKE: HSE
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer HSE
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 115
Min hFE 25
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 5.0m
Polarity NPN
Derate Above 25°C 920m
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 115 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 1276626
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