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HVT900
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HVT900

SKU: HVT900
HVT900 Transistor Silicon NPN CASE: TO46 MAKE: Microsemi Corporation
Product specifications
Type Transistor Silicon NPN
Case TO46
Manufacturer Microsemi Corporation
Vbr CBO 900
Vbr CEO 400
Max. PD (W) 300m
C(ob) (F) 6.0p
Derate (Amb) (W/°C) 333u
hfe 30
Icbo Max. @Vcb Max. (A) 200u
Polarity NPN
Trans. Freq (Hz) Min. 6.0M
@VCE (test) (V) 7.0i
@Ic (A) 5.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 900 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 706521
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