The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
IDI8001
View detailed images (13)

IDI8001

SKU: IDI8001
IDI8001 Transistor Silicon NPN CASE: TO3 MAKE: International Devices
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer International Devices
Vbr CEO 200
Max. PD (W) 90
t(f) Max. (S) 1.0u
Min hFE 100
Ic Max. (A) 15
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 1.0m
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 500n
R(sat) (Û) 200m
t(stor) Max. (S) 3.0u
Derate Above 25°C 769m
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 544370
Back