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IMD10AMT1G
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IMD10AMT1G

SKU: IMD10AMT1G
IMD10AMT1G Transistor Silicon Pre-Biased-NPN - PNP CASE: SC74 MAKE: Generic
Datasheet
IMD10AMT1G Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SC74
Manufacturer ON Semiconductor
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.285 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 68
SMD Transistor Code D10
Built in Bias Resistor R1 13 kOhm
Built in Bias Resistor R2 0 kOhm
SKU 1432916
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