IMH20TR1G
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IMH20TR1G

SKU: IMH20TR1G
IMH20TR1G Transistor Silicon Pre-Biased-NPN CASE: SOT6 MAKE: ON Semiconductor
Datasheet
IMH20TR1G Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT6
Manufacturer ON Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code H20
Built in Bias Resistor R1 2.2 kOhm
SKU 559998
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