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IR1001
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IR1001

SKU: IR1001
IR1001 Transistor Silicon NPN CASE: TO3 MAKE: International Rectifier - IR
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer International Rectifier - IR
Vbr CEO 80
Max. PD (W) 90
Min hFE 1.0k
Ic Max. (A) 8.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 500u
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 666m
Derate Above 25°C 515m
@VCE (test) 3.0
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-38
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 544542
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