IR2002

SKU: IR2002

IR2002 Transistor Silicon NPN CASE: TO3 MAKE: Sharp Microelectronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Sharp Microelectronics
Vbr CEO	80
Max. PD (W)	720m
Max. hFE	30k
Min hFE	2.0k
Ic Max. (A)	1.0
@Ic (test) (A)	600m
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	NPN
@VCE (test)	2.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.72 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	2000
SKU	1277463

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