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IR2701
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IR2701

SKU: IR2701
IR2701 Transistor Silicon PNP CASE: TO3 MAKE: Sharp Microelectronics
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer Sharp Microelectronics
Vbr CBO 450
Vbr CEO 350
Max. PD (W) 125
Derate (Amb) (W/°C) 1.0
t(f) Max. (S) 800n
Min hFE 5.0
Ic Max. (A) 5.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Tr Max. (s) 1.2u
R(sat) (Û) 400m
Trans. Freq (Hz) Min. 5.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 450 V
Maximum Collector-Emitter Voltage |Vce| 350 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SKU 544548
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