IRF640 Datasheet |
Case | TO220 | |
Type | Transistor N Channel MOSFET | |
Manufacturer | ST Microelectronics - STM | |
Vbr DSS | 200 | |
Vbr GSS | 20 | |
Max. PD (W) | 125# | |
Ciss Max. (F) | 1.3n- | |
td(on) Max (S) | 21n | |
Derate (Amb) (W/°C) | 1.0 | |
t(f) Max. (S) | 54n | |
gfs Max. | 10- | |
gfs Min | 6.7 | |
Id Max. (A) | 18# | |
I(d) for G(fs) | 10 | |
Tr Max. (s) | 77n | |
R(ds) On (Û) | 180m= | |
t(stor) Max. (S) | 68n | |
Vp Max. | 4.0 | |
Oper. Temp (°C) Max. | 150 | |
Pinout Equivalence Number | 4-109 | |
Surface Mounted Yes/No | NO | |
SKU | 20282 |