| IRFD110 Datasheet |
| Type | Transistor N Channel MOSFET | |
| Case | DIP4 | |
| Manufacturer | Vishay Semiconductor | |
| Vbr DSS | 100 | |
| Vbr GSS | 20 | |
| Max. PD (W) | 1.0# | |
| Ciss Max. (F) | 135p- | |
| td(on) Max (S) | 20n | |
| Derate (Amb) (W/°C) | 8.0m | |
| t(f) Max. (S) | 20n | |
| gfs Max. | 1.2- | |
| gfs Min | 800m | |
| Id Max. (A) | 1.0# | |
| I(d) for G(fs) | 800m | |
| Tr Max. (s) | 25n | |
| R(ds) On (Û) | 600m= | |
| t(stor) Max. (S) | 25n | |
| Vp Max. | 4.0 | |
| Oper. Temp (°C) Max. | 150 | |
| Pinout Equivalence Number | 4-83 | |
| Surface Mounted Yes/No | NO | |
| SKU | 20284 | |