| Type | Transistor | |
| Case | TO252 | |
| Manufacturer | Samsung | |
| Vbr DSS | 400 | |
| Vbr GSS | 20 | |
| Max. PD (W) | 50# | |
| Ciss Max. (F) | 350p- | |
| td(on) Max (S) | 15n | |
| Derate (Amb) (W/°C) | 400m | |
| t(f) Max. (S) | 20n | |
| gfs Max. | 2.6- | |
| gfs Min | 1.7 | |
| Id Max. (A) | 2.6# | |
| I(d) for G(fs) | 1.7 | |
| Tr Max. (s) | 21n | |
| R(ds) On (Û) | 2.5 | |
| t(stor) Max. (S) | 45n | |
| Oper. Temp (°C) Max. | 150 | |
| Pinout Equivalence Number | 4-109 | |
| Surface Mounted Yes/No | YES | |
| SKU | 202448 | |