KRA563E
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KRA563E

SKU: KRA563E
KRA563E Transistor Silicon PNP CASE: Standard MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case Standard
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SMD Transistor Code PO
Built in Bias Resistor R1 22 kOhm
SKU 1433397
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