KRC656E
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KRC656E

SKU: KRC656E
KRC656E Transistor Silicon Pre-Biased-NPN CASE: Standard MAKE: Toshiba
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case Standard
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code NF
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 1433629
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