The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
KRC660E
View detailed images (1)

KRC660E

SKU: KRC660E
KRC660E Transistor Silicon Pre-Biased-NPN CASE: Standard MAKE: Toshiba
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case Standard
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code NK
Built in Bias Resistor R1 4.7 kOhm
SKU 1433636
Back