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KRC662E
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KRC662E

SKU: KRC662E
KRC662E Transistor Silicon Pre-Biased-NPN CASE: Standard MAKE: Toshiba
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case Standard
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code NN
Built in Bias Resistor R1 100 kOhm
SKU 1433640
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