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KSA1182O

KSA1182O

SKU: KSA1182O
KSA1182O Transistor Silicon PNP CASE: SOT23 MAKE: Samsung
Product specifications
Equivalent KSA1182
Type Transistor Silicon PNP
Case SOT23
Manufacturer Samsung
Vbr CBO 35
Vbr CEO 30
Max. PD (W) 150m
C(ob) (F) 13p
hfe 25
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 400m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code F1O_F1Y
SKU 569835
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