| Weight |
0.01 kg
|
| Equivalent |
KSA539 |
| Type |
Transistor Silicon PNP |
| Case |
TO92 |
| Manufacturer |
Samsung |
| Vbr CBO |
60 |
| Vbr CEO |
45 |
| Max. PD (W) |
400m |
| hfe |
40 |
| Ic Max. (A) |
200m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| @VCE (test) (V) |
1.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
50m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.4 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
45 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.2 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Forward Current Transfer Ratio (hFE), MIN |
120 |
| SKU |
569386 |