KSB1116A

SKU: KSB1116A

KSB1116A Transistor Silicon PNP CASE: TO92 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSB1116
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Samsung
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	750m
C(ob) (F)	25p
Derate (Amb) (W/°C)	6m
hfe	135
Ic Max. (A)	1.0
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	70M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	150
@Ic (A)	100m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.75 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	2.5 pF
Transition Frequency (ft):	70 MHz
Forward Current Transfer Ratio (hFE), MIN	135
SKU	217906

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