KSB1151Y

SKU: KSB1151Y

KSB1151Y Transistor Silicon PNP CASE: SOT32 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSB1151
Type	Transistor Silicon PNP
Case	SOT32
Manufacturer	Samsung
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	20
Derate (Amb) (W/°C)	160m
t(f) Max. (S)	1.0u
Max. hFE	400
Min hFE	100
Ic Max. (A)	5.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Oper. Temp (°C) Max.	150
@VCE (V)	1.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	160
SKU	569873

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