The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
KSB795
View detailed images (13)

KSB795

SKU: KSB795
KSB795 Transistor Silicon PNP CASE: TO126 MAKE: Samsung
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Samsung
Vbr CEO 80
Max. PD (W) 10
Max. hFE 30k
Min hFE 2k
Ic Max. (A) 1.5
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 10u
Mat. Silicon Logic
Polarity PNP
Derate Above 25°C 80m
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 217930
Back