KSB810

SKU: KSB810

KSB810 Transistor Silicon PNP CASE: TO92 MAKE: Samsung

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Samsung
Vbr CBO	30
Vbr CEO	25
Max. PD (W)	350m
C(ob) (F)	17p
hfe	70
Ic Max. (A)	700m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	50M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	150
@Ic (A)	100m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.35 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.7 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	17 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	217932

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