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KSB811
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KSB811

SKU: KSB811
KSB811 Transistor Silicon PNP CASE: TO92 MAKE: Samsung
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Samsung
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 350m
C(ob) (F) 18p
Derate (Amb) (W/°C) 4m
hfe 70
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 110M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 18 pF
Transition Frequency (ft): 110 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 217933
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