KSB817Y
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KSB817Y

SKU: KSB817Y
KSB817Y Transistor Silicon PNP CASE: TO3P MAKE: Samsung
Product specifications
Type Transistor Silicon PNP
Case TO3P
Manufacturer Samsung
Polarity PNP
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 300 pF
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 1433879
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