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KSB906
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KSB906

SKU: KSB906
KSB906 Transistor Silicon PNP CASE: TO252 MAKE: Samsung
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer Samsung
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 20
Derate (Amb) (W/°C) 160m
t(f) Max. (S) 500n-
Max. hFE 200
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 9M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 217937
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