KSC1008

SKU: KSC1008

KSC1008 Transistor - CASE: TO92 MAKE: Samsung

Datasheet

KSC1008 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	KSC1008R
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Samsung
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	800m
C(ob) (F)	8.0p
hfe	40
Ic Max. (A)	700m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	30M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	150
@Ic (A)	50m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	0.7 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	8 pF
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	87120

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