KSC1009G

SKU: KSC1009G

KSC1009G Transistor - CASE: TO92 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSC1009
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Samsung
Vbr CBO	160
Vbr CEO	140
Max. PD (W)	800m
C(ob) (F)	8.0p
hfe	40
Ic Max. (A)	700m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	30M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	150
@Ic (A)	50m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	140 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	0.7 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	8 pF
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	200
SKU	569883

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