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KSC1187O
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KSC1187O

SKU: KSC1187O
KSC1187O Transistor - CASE: TO92 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Equivalent KSC1187
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 250m
C(ob) (F) 600f
hfe 40
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 400M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.6 pF
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 569898
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