| Weight |
0.01 kg
|
| Equivalent |
KSC2223Y |
| Type |
Transistor Silicon NPN |
| Case |
SOT23 |
| Manufacturer |
Samsung |
| Vbr CBO |
30 |
| Vbr CEO |
20 |
| Max. PD (W) |
150m |
| Derate (Amb) (W/°C) |
1.2m |
| hfe |
40 |
| Ic Max. (A) |
20m |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
400M |
| @VCE (test) (V) |
6.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
1.0m |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.15 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
0.02 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
1 pF |
| Transition Frequency (ft): |
400 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SMD Transistor Code |
H1R_H5O_H5Y |
| SKU |
217944 |