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KSC2233
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KSC2233

SKU: KSC2233
KSC2233 Transistor Silicon NPN CASE: TO220 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Samsung
Vbr CBO 200
Vbr CEO 60
Max. PD (W) 40
Max. hFE 150
Min hFE 30
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 320m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 217945
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