KSC2310

SKU: KSC2310

KSC2310 Transistor Silicon NPN CASE: TO92 MAKE: Samsung

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Samsung
Vbr CBO	200
Vbr CEO	150
Max. PD (W)	800m
C(ob) (F)	5.0p
Derate (Amb) (W/°C)	6.4m
hfe	40
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	150
@Ic (A)	10m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3.5 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	217949

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