KSC2682O

SKU: KSC2682O

KSC2682O Transistor - CASE: SOT32 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSC2682
Type	Transistor Silicon NPN
Case	SOT32
Manufacturer	Samsung
Vbr CBO	180
Vbr CEO	180
Max. PD (W)	8.0
Max. hFE	320
Min hFE	100
Ic Max. (A)	100m
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Derate Above 25°C	64m
Trans. Freq (Hz) Min.	200M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	8 W
Maximum Collector-Base Voltage \|Vcb\|	180 V
Maximum Collector-Emitter Voltage \|Vce\|	180 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3.2 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	569961

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