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KSC2682Y
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KSC2682Y

SKU: KSC2682Y
KSC2682Y Transistor - CASE: SOT32 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Equivalent KSC2682
Type Transistor Silicon NPN
Case SOT32
Manufacturer Samsung
Vbr CBO 180
Vbr CEO 180
Max. PD (W) 8.0
Max. hFE 320
Min hFE 100
Ic Max. (A) 100m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 64m
Trans. Freq (Hz) Min. 200M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 8 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 180 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3.2 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 569962
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