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KSC2690
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KSC2690

SKU: KSC2690
KSC2690 Transistor Silicon NPN CASE: SOT32 MAKE: Samsung
Datasheet
KSC2690 Datasheet
Product specifications
Equivalent KSC2690A
Type Transistor Silicon NPN
Case SOT32
Manufacturer Samsung
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 20
Max. hFE 320
Min hFE 60
Ic Max. (A) 1.2
@Ic (test) (A) 300m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 160m
Trans. Freq (Hz) Min. 155M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 19 pF
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 355510
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