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KSC2715Y
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KSC2715Y

SKU: KSC2715Y
KSC2715Y Transistor Silicon NPN CASE: SOT23 MAKE: Samsung
Product specifications
Equivalent KSC2715
Type Transistor Silicon NPN
Case SOT23
Manufacturer Samsung
Vbr CBO 35
Vbr CEO 30
Max. PD (W) 150m
C(ob) (F) 3.2p
hfe 40
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 12
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3.2 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code B1O_B1Y
SKU 569969
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