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KSC2755Y
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KSC2755Y

SKU: KSC2755Y
KSC2755Y Transistor Silicon NPN CASE: SOT23 MAKE: Samsung
Product specifications
Equivalent KSC2755
Type Transistor Silicon NPN
Case SOT23
Manufacturer Samsung
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 150m
C(ob) (F) 20p
Derate (Amb) (W/°C) 1.2m
hfe 60
Ic Max. (A) 20m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 400M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 3.0m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.5 pF
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code H1O_H1R_H1Y
SKU 569975
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