| Weight |
0.01 kg
|
| Equivalent |
KSC2757Y |
| Type |
Transistor Silicon NPN |
| Case |
SOT23 |
| Manufacturer |
Samsung |
| Vbr CBO |
30 |
| Vbr CEO |
15 |
| Max. PD (W) |
150m |
| C(ob) (F) |
1.5p |
| Derate (Amb) (W/°C) |
1.2m |
| hfe |
60 |
| Ic Max. (A) |
50m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
800M |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
5.0m |
| Pinout Equivalence Number |
3-7 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.15 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
15 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.05 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
1.5 pF |
| Transition Frequency (ft): |
800 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
60 |
| SMD Transistor Code |
H3O_H3R_H3Y |
| SKU |
569500 |