KSC3120

SKU: KSC3120

KSC3120 SI-NPN - Case: SOT23 Make: Samsung

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	Samsung
Vbr CBO	30
Vbr CEO	15
Max. PD (W)	150m
C(ob) (F)	900f
Derate (Amb) (W/°C)	1.2m
hfe	40
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	1.5G
@VCE (test) (V)	10
Oper. Temp (°C) Max.	125
@Ic (A)	5.0m
Pinout Equivalence Number	3-7
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	0.9 pF
Transition Frequency (ft):	1500 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SMD Transistor Code	H9Z
SKU	569507

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