Weight |
0.01 kg
|
Case |
SOT23 |
Type |
Transistor Silicon NPN |
Manufacturer |
Samsung |
Vbr CBO |
30 |
Vbr CEO |
25 |
Max. PD (W) |
200m |
C(ob) (F) |
13p |
hfe |
100 |
Ic Max. (A) |
800m |
Icbo Max. @Vcb Max. (A) |
100n |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
120M |
@VCE (test) (V) |
1.0 |
Oper. Temp (°C) Max. |
150 |
@Ic (A) |
100m |
Pinout Equivalence Number |
3-7 |
Surface Mounted Yes/No |
YES |
Maximum Collector Power Dissipation (Pc) |
0.2 W |
Maximum Collector-Base Voltage |Vcb| |
30 V |
Maximum Collector-Emitter Voltage |Vce| |
25 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.8 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
13 pF |
Transition Frequency (ft): |
120 MHz |
Forward Current Transfer Ratio (hFE), MIN |
100 |
SMD Transistor Code |
K1O_K1Y |
SKU |
569511 |