KSC3552

SKU: KSC3552

KSC3552 Transistor Silicon NPN CASE: TO3P MAKE: Samsung

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3P
Manufacturer	Samsung
Vbr CBO	1.1k
Vbr CEO	800
Max. PD (W)	150
t(f) Max. (S)	300n
Max. hFE	40
Min hFE	10
Ic Max. (A)	12
@Ic (test) (A)	800m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	1.2
Trans. Freq (Hz) Min.	15M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	1100 V
Maximum Collector-Emitter Voltage \|Vce\|	800 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	215 pF
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	1274259

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