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KSC5021
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KSC5021

SKU: KSC5021
KSC5021 Transistor Silicon NPN CASE: TO220 MAKE: Samsung
Datasheet
KSC5021 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Samsung
Vbr CBO 800
Vbr CEO 500
Max. PD (W) 50
t(f) Max. (S) 300n
Max. hFE 50
Min hFE 15
Ic Max. (A) 5.0
@Ic (test) (A) 600m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 18M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 800 V
Maximum Collector-Emitter Voltage |Vce| 500 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 18 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 355513
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