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KSC5022
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KSC5022

SKU: KSC5022
KSC5022 Transistor Silicon NPN CASE: TO3P MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO3P
Manufacturer Samsung
Vbr CBO 800
Vbr CEO 500
Max. PD (W) 60
t(f) Max. (S) 300n
Max. hFE 50
Min hFE 15
Ic Max. (A) 4.0
@Ic (test) (A) 300m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 480m
Trans. Freq (Hz) Min. 18M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 800 V
Maximum Collector-Emitter Voltage |Vce| 500 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 80 pF
Transition Frequency (ft): 18 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 1271783
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