The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
KSC5024
View detailed images (12)

KSC5024

SKU: KSC5024
KSC5024 Transistor Silicon NPN CASE: TO3P MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO3P
Manufacturer Samsung
Vbr CBO 800
Vbr CEO 500
Max. PD (W) 90
t(f) Max. (S) 300n
Max. hFE 50
Min hFE 15
Ic Max. (A) 10
@Ic (test) (A) 800m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 720m
Trans. Freq (Hz) Min. 18M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 800 V
Maximum Collector-Emitter Voltage |Vce| 500 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 120 pF
Transition Frequency (ft): 18 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 1274133
Back